A Compact Harmonic Radar System With Active Tags at 61/122 GHz ISM Band in SiGe BiCMOS for Precise Localization
نویسندگان
چکیده
This article presents a frequency-modulated continuous wave (FMCW) harmonic radar in the 61-/122-GHz industrial, scientific, and medical (ISM) frequency bands. The is based on two self-designed monolithic microwave integrated circuits (MMICs) for transceiver (TRX) tag which are fabricated 130-nm SiGe BiCMOS technology. presented TRX-MMIC consists of fundamental voltage-controlled oscillator (VCO), power amplifier (PA), Wilkinson dividers, static divide-by-16 chain stabilization within phase-locked loop (PLL) transmitter (TX) part. receiver (RX) part has channels with low noise (LNA), Gilbert cell mixer, an intermediate (IF)-amplifier each. VCO converted by doubler distributed to local (LO) input RX-mixers. With such TRX architecture active nonlinear antennas, pre-amplifiers, can be detected. For sweep from 60 64 GHz, spatial resolution 4 cm at 1-m distance range 23.3 m achieved. these characteristics, enables applications millimeter-wave (mm-wave) medium high accuracy small form factor.
منابع مشابه
A 5.8-GHz ETC Transceiver Using SiGe-BiCMOS
A fully integrated 5.8 GHz ETC transceiver LSI has been developed. The transceiver consists of LNA, down-conversion MIX, ASK detector, ASK modulator, DA VCO, and ∆Σ-fractional-N PLL. The features of the transceiver are integrated matching circuitry for LNA input and for DA output, ASK modulator with VGA for local signal control to avoid local leakage and to keep suitable modulation index, and L...
متن کاملGHZ Si BiCMOS ACTIVE INDUCTORS
The limitations on the implementation of BiCMOS active inductors at 2GHz are described. The circuit is based on a two BJT feedback configuration. Two types of biasing circuits were used: active bias and resistive bias. With 0.8μm BiCMOS standard technology is possible to obtain up to a few nanohenry inductance with a Q close to 3 at 2GHz. Two MMIC were studied.
متن کاملA Q-Band Frequency Synthesizer in 0.13 μm SiGe BiCMOS
In this paper, a 42GHz frequency synthesizer fabricated with 0.13μm SiGe BiCMOS technology is presented, which consists of an integer-N fourth-order type-II phase locked loop (PLL) with a LC tank VCO and a frequency doubler. The core PLL has three-stage current mode logic (CML) and five stage true single phase clock (TSPC) logic in the frequency divider. Meanwhile, a novel balanced common-base ...
متن کاملA Compact MIMO Antenna Design for 2.4 GHz ISM Band Frequency Applications
In this paper, compact antenna has been designed that can be implemented in a 2X2 Multiple-Input MultipleOutput (MIMO) system. A microstrip patch antenna fed by a microstrip line is designed for a frequency of 2.4 GHz used for industrial, scientific and medical (ISM) band applications. Polarization diversity of the two antennas is used to construct independent and uncorrelated signals on each a...
متن کاملAn 8 – 18 GHz Wideband SiGe BiCMOS Low Noise Amplifier
In this paper, an 8 – 18 GHz wideband low noise amplifier (LNA) with an active balun fabricated in a 0.13-μm SiGe BiCMOS technology was presented. The LNA achieves 16dB of gain with 1.5 dB variation over the 8GHz to 18 GHz frequency band and a matched input with less than -9 dB of reflection. The minimum noise figure (NF) is 5 dB at 8GHz and increases to 6 dB at 18GHz. The measured IIP3 is -15-...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: IEEE Transactions on Microwave Theory and Techniques
سال: 2021
ISSN: ['1557-9670', '0018-9480']
DOI: https://doi.org/10.1109/tmtt.2020.3026353